ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,582, issued on May 13, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor memory device" was invented by Hidenobu Nagashima (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes a stacked body, memory pillars, first and second insulation layers and an isolation region. The stacked body above a substrate includes conductive layers isolated from each other and stacked along a first direction crossing the substrate surface. The memory pillars extend through the stacked body along the first direction. The first insulation layer is provided above the memory pillars. The ...