US Patent Issued to Kioxia on May 13 for "Semiconductor device with multilayer insulating layer in recess and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,614, issued on May 13, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device with multilayer insulating layer in recess and method of manufacturing the same" was invented by Kosuke Horibe (Yokkaichi Mie, Japan), Kei Watanabe (Yokkaichi Mie, Japan) and Shinya Okuda (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insu...