ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,320, issued on May 13, was assigned to KIOXIA Corp. (Tokyo).
"Nonvolatile semiconductor memory device" was invented by Yasuhiro Shiino (Yokohama Kanagawa, Japan) and Eietsu Takahashi (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A nonvolatile semiconductor memory device includes a control circuit configured to control a soft program operation of setting nonvolatile memory cells to a first threshold voltage distribution state of the nonvolatile memory cells. When a characteristic of the nonvolatile memory cells is in a first state, the control circuit executes the soft program operation by applying a first voltage for setti...