ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,594, issued on March 4, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device" was invented by Koji Kato (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device comprises: a substrate; a first conductive layer separated from the substrate in a first direction and extending in a second direction; a second and a third conductive layers separated from the substrate and the first conductive layer in the first direction and aligned in the second direction; a first semiconductor layer facing the first and the second conductive layers; a second semiconductor layer facing the first and the third conductive ...