US Patent Issued to KIOXIA on March 4 for "Chemical solution, etching method, and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,751, issued on March 4, was assigned to KIOXIA Corp. (Tokyo).

"Chemical solution, etching method, and method for manufacturing semiconductor device" was invented by Hakuba Kitagawa (Yokkaichi Mie, Japan), Tatsuhiko Koide (Kuwana Mie, Japan) and Hiroshi Fujita (Mie Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a chemical solution comprises a mixed acid including an inorganic acid, an oxidizing agent, a carboxylic acid, and water; and polyethyleneimine of a concentration in the chemical solution in a range of 0.05 wt % to 10 wt %."

The patent was filed on Sept. 3, 2021, under Application No. 17/466,273.

*For ...