US Patent Issued to KIOXIA on March 25 for "Transistor, semiconductor memory device, and manufacturing method for transistor" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,221, issued on March 25, was assigned to KIOXIA Corp. (Tokyo).

"Transistor, semiconductor memory device, and manufacturing method for transistor" was invented by Kiwamu Sakuma (Mie, Japan), Taro Shiokawa (Aichi, Japan) and Keiko Sakuma (Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes an upper electrode; a lower electrode; a gate electrode disposed between the upper electrode and the lower electrode; and a columnar portion penetrating the gate electrode and provided between the upper electrode and the lower electrode. The columnar portion includes a tubular gate insulating film and a semiconductor layer, the tubular g...