US Patent Issued to Kioxia on March 25 for "Semiconductor device manufacturing method, semiconductor memory device manufacturing method, semiconductor memory device, and substrate treatment apparatus" (Japanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,041, issued on March 25, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor device manufacturing method, semiconductor memory device manufacturing method, semiconductor memory device, and substrate treatment apparatus" was invented by Tsunehiro Ino (Fujisawa, Japan) and Akira Takashima (Fuchu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device manufacturing method of embodiments includes: forming an aluminum nitride film; forming an aluminum hydroxide film containing diaspore-type aluminum hydroxide by performing treatment in a fluid containing water to the aluminum nitride film; and forming an aluminum oxide film contain...