ALEXANDRIA, Va., March 19 -- United States Patent no. 12,254,929, issued on March 18, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Masanobu Shirakawa (Chigasaki Kanagawa, Japan), Takuya Futatsuyama (Yokohama Kanagawa, Japan), Kenichi Abe (Yokohama Kanagawa, Japan), Hiroshi Nakamura (Fujisawa Kanagawa, Japan), Keisuke Yonehama (Kamakura Kanagawa, Japan), Atsuhiro Sato (Meguro Tokyo, Japan), Hiroshi Shinohara (Yokosuka Kanawaga, Japan), Yasuyuki Baba (Ayase Kanagawa, Japan) and Toshifumi Minami (Yokohama Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first memory cell, a second memory cell above the first memory cel...