ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,155, issued on June 3, was assigned to Kioxia Corp. (Tokyo).
"Non-volatile storage device" was invented by Masaaki Higuchi (Yokkaichi Mie, Japan), Masaru Kito (Kuwana Mie, Japan) and Masao Shingu (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, a non-volatile storage device includes a first layer, a second layer formed on the first layer, a stacked body including a plurality of conductive films stacked on the second layer, and a semiconductor pillar which penetrates the stacked body and the second layer and reaches the first layer. The semiconductor pillar includes a semiconductor film formed along an e...