ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,338, issued on June 17, was assigned to Kioxia Corp. (Minato-ku, Japan).
"Method of manufacturing semiconductor device" was invented by Takaya Ishino (Yokkaichi, Japan), Atsushi Takahashi (Yokkaichi, Japan) and Kazunori Zaima (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes performing a first process of forming a concave portion in the first film and forming a second film on a surface of the first film that is exposed in the concave portion by using a first gas containing a carbon element and a...