US Patent Issued to Kioxia on June 17 for "Magnetic memory including transistors and magnetoresistive elements respectively connected between a conductive plate and a conductive line and additional transistors each connected between the conductive line and another conductive line" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,191, issued on June 17, was assigned to Kioxia Corp. (Tokyo).

"Magnetic memory including transistors and magnetoresistive elements respectively connected between a conductive plate and a conductive line and additional transistors each connected between the conductive line and another conductive line" was invented by Yoshihiro Ueda (Yokohama Kanagawa, Japan) and Masatoshi Yoshikawa (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory includes first conductive lines, a second conductive line, a third conductive line, a fourth conductive line, a conductive layer, magnetoresistive elements, first transistors, a second transistor, and ...