ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,874, issued on June 10, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor storage device" was invented by Hanae Ishihara (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first region including first semiconductor pillars extending through first conductive layers; a second region including second semiconductor pillars extending through second conductive layers; and a third region disposed between the first region and the second region and including insulator columns extending through third conductive layers. The third region includes a fourth region and a fifth region. In the fourth region, one third conduct...