US Patent Issued to Kioxia on June 10 for "Magnetoresistance memory device" (South Korean Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,038, issued on June 10, was assigned to Kioxia Corp. (Tokyo).

"Magnetoresistance memory device" was invented by Taiga Isoda (Seoul, South Korea), Eiji Kitagawa (Seoul, South Korea), Young Min Eeh (Seongnam-si, South Korea), Tadaaki Oikawa (Seoul, South Korea) and Kazuya Sawada (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistance memory device includes first, second, third and fourth ferromagnetic layers; a first and second ferromagnetic oxide layers; a metal layer; an insulating layer. The second ferromagnetic layer includes one of iron and cobalt included in the first ferromagnetic oxide layer and one element of a ...