ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,697, issued on July 8, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Takafumi Masuda (Kawasaki Kanagawa, Japan), Mutsumi Okajima (Yokkaichi Mie, Japan), Nobuyoshi Saito (Tokyo) and Keiji Ikeda (Kawasaki Kanagawa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device comprises: memory layers arranged in a first direction; and a first wiring extending in the first direction. The memory layers each comprise: a memory portion; a transistor; and a second wiring. The transistor comprises: a semiconductor layer electrically connected between the memory portion and the first wiring; a gate el...