ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,613, issued on July 8, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Takuya Suzuki (Kuwana, Japan) and Ken Iyoda (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate that includes a first region and a second region. The first region includes: a plurality of first word line layers; a first semiconductor layer having an outer peripheral surface opposed to the plurality of first word line layers; and a first electric charge accumulating film disposed between the plurality of first word line layers and the first semiconductor layer. The second region incl...