US Patent Issued to Kioxia on July 8 for "Method of manufacturing semiconductor device and method of forming pattern" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,906, issued on July 8, was assigned to Kioxia Corp. (Tokyo).

"Method of manufacturing semiconductor device and method of forming pattern" was invented by Toshiaki Komukai (Yokkaichi, Japan) and Motofumi Komori (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes applying a resin on a first surface of a first layer, the first layer comprising a first hole having a first depth and a second hole having a second depth, forming a pattern on the resin, the pattern comprising a convex part above the first hole a diameter of the convex part being smaller than a diameter of an opening of th...