US Patent Issued to Kioxia on July 8 for "Memory device applying plural different read voltages to a word line in a read operation" (Japanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,354,652, issued on July 8, was assigned to Kioxia Corp. (Tokyo).

"Memory device applying plural different read voltages to a word line in a read operation" was invented by Mitsuaki Honma (Fujisawa Kanagawa, Japan) and Noboru Shibata (Kawasaki Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device is configured to execute an efficient read operation is provided. The memory device includes a plurality of memory cells, a word line, and a controller. Each of the memory cells stores first to fifth bit data based on the threshold voltage. The memory cells store a first page to a fifth page respectively corre...