US Patent Issued to Kioxia on July 29 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,308, issued on July 29, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Keiji Hosotani (Yokkaichi Mie, Japan), Fumitaka Arai (Yokkaichi Mie, Japan), Hiroaki Kosako (Yokkaichi Mie, Japan), Takayuki Kakegawa (Yokkaichi Mie, Japan), Shinya Naito (Toyota Aichi, Japan), Ryo Fukuoka (Yokkaichi Mie, Japan) and Kouji Matsuo (Ama Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a memory cell array and a peripheral circuit. The peripheral circuit includes a plurality of first nodes disposed corresponding to a plurality of first via electrodes, a charging circuit that charges...