ALEXANDRIA, Va., July 30 -- United States Patent no. RE50,512, issued on July 29, was assigned to Kioxia Corp. (Tokyo).

"Non-volatile semiconductor storage device" was invented by Dai Nakamura (Kawasaki, Japan), Hiroyuki Kutsukake (Yokohama, Japan), Kenji Gomikawa (Yokohama, Japan), Takeshi Shimane (Matsudo, Japan), Mitsuhiro Noguchi (Yokohama, Japan), Koji Hosono (Fujisawa, Japan), Masaru Koyanagi (Ota, Japan) and Takashi Aoi (Yokohama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile semiconductor storage device includes: a memory cell array having memory cells arranged therein, the memory cells storing data in a non-volatile manner; and a plurality of transfer transistors transferring a...