US Patent Issued to Kioxia on July 15 for "Semiconductor storage device that varies voltages applied to bit lines" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,019, issued on July 15, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device that varies voltages applied to bit lines" was invented by Yoichi Minemura (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a first word line, a first insulating layer extending along the first word line, a first memory cell connected to the first word line, a second memory cell connected to the first word line, a first bit line connected to the first memory cell, a second bit line connected to the second memory cell, and a control circuit. The second memory cell is farther from the first insulating ...