ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,303, issued on July 15, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Nobuaki Okada (Kawasaki, Japan), Masaki Unno (Fujisawa, Japan), Hiroyuki Takenaka (Kamakura, Japan), Yoshiaki Takahashi (Yokohama, Japan) and Hiroshi Maejima (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device comprises a first chip and a second chip bonded via bonding electrodes. The first chip comprises a semiconductor substrate. The second chip comprises: first conductive layers; semiconductor layers facing the first conductive layers; a first wiring layer including bit lines; a second wiring layer ...