ALEXANDRIA, Va., July 16 -- United States Patent no. 12,363,917, issued on July 15, was assigned to Kioxia Corp. (Tokyo).
"Memory device" was invented by Kensuke Takahashi (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a memory device includes a first conductor layer and a second conductor layer spaced apart from each other in a first direction, a first semiconductor film spaced from the first conductor layer in a second direction intersecting the first direction, and a second semiconductor film spaced from the second conductor layer in the second direction. The first semiconductor film is between a first resistance change film and the first conductor layer ...