US Patent Issued to Kioxia on July 1 for "Three-dimensional memory stack structure with source line including an insulating dividing portion" (Japanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,347, issued on July 1, was assigned to Kioxia Corp. (Tokyo).

"Three-dimensional memory stack structure with source line including an insulating dividing portion" was invented by Daigo Ichinose (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor storage device includes a stacked body, a columnar body, a conductive member, a plate-like portion, and a dividing portion. In the stacked body, a plurality of conductive layers and a plurality of insulating layers are alternately stacked one by one, and a stepped portion including the conductive layers is formed to be faced to an end in a first direction....