US Patent Issued to KIOXIA on July 1 for "Semiconductor memory device that includes a semiconductor column that penetrates a plurality of conductive layers" (Japanese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,356, issued on July 1, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device that includes a semiconductor column that penetrates a plurality of conductive layers" was invented by Toshifumi Hashimoto (Fujisawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of first conductive layers, a second conductive layer disposed at a position farther from or a position closer to the substrate than the plurality of first conductive layers, a first semiconductor column, a first electric charge accumulating film, a first wiring disposed at a position farther from or a position clos...