ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,359, issued on July 1, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Tsuneo Inaba (Kamakura, Japan), Keisuke Nakatsuka (Kobe, Japan) and Takashi Maeda (Kamakura, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, in a semiconductor memory device, a gate electrode of a first PMOS transistor and a gate electrode of a first NMOS transistor are commonly connected, and a first contact plug is connected to the commonly-connected gate electrodes to at least partly overlap with an isolation portion when viewed in a third direction perpendicular to a first direction and a second direction. A...