US Patent Issued to Kioxia on July 1 for "Non-volatile memory device" (Japanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,357, issued on July 1, was assigned to Kioxia Corp. (Tokyo).

"Non-volatile memory device" was invented by Takashi Ishida (Yokkaichi, Japan), Yoshiaki Fukuzumi (Yokkaichi, Japan), Takayuki Okada (Kuwana, Japan) and Masaki Tsuji (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. T...