US Patent Issued to KIOXIA on Jan. 28 for "Semiconductor storage device and method for fabricating semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,812, issued on Jan. 28, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor storage device and method for fabricating semiconductor storage device" was invented by Yuanting Wang (Yokkaichi Mie, Japan), Masato Shini (Mie Mie, Japan) and Minoru Oda (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a first substrate, a second substrate, a first stacked body, and a second stacked body. The first stacked body is provided between the first substrate and the second substrate and includes a first trace, a first pad connected to the first trace, and a first insulator. The second stacked body is prov...