US Patent Issued to Kioxia on Jan. 28 for "Semiconductor storage device acquiring voltage from dummy pillars" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,561, issued on Jan. 28, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device acquiring voltage from dummy pillars" was invented by Takeshi Hioka (Machida Tokyo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a plurality of word line layers stacked above one another in a first direction, a memory pillar having a columnar body penetrating the plurality of the word line layers, wherein each portion of the memory pillar intersecting the word line layers functions as a memory cell transistor, a source line layer to which an end of the memory pillar is connected, an acquisition circuit configure...