ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,314, issued on Jan. 28, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device with improved aspect ratio" was invented by Hiroshi Takeda (Yokkaichi Mie, Japan) and Keitaro Naito (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first stacked body and a second stacked body stacked on each other. A columnar semiconductor film penetrates the first stacked body and the second stacked body, and a charge storage film is between the first semiconductor film and the stacked bodies. A first dummy memory cell is at a position where a first conductive layer in the first stacked body that is closest to ...