US Patent Issued to Kioxia on Jan. 28 for "Nonvolatile semiconductor memory device with a plurality of memory cells arranged in a three-dimensional direction" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,213,324, issued on Jan. 28, was assigned to Kioxia Corp. (Tokyo).

"Nonvolatile semiconductor memory device with a plurality of memory cells arranged in a three-dimensional direction" was invented by Daisaburo Takashima (Yokohama Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a nonvolatile semiconductor memory device, in a cell block, a local bit line is connected to a bit line via a select transistor. The local bit line extends in a third direction. A local source line is connected to a source line and extends in the third direction. A plurality of memory cells are connected in parallel between the local source line and the local bit ...