US Patent Issued to Kioxia on Jan. 20 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,483, issued on Jan. 20, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Keisuke Nakatsuka (Kobe Hyogo, Japan), Yasuhiro Uchiyama (Yokkaichi Mie, Japan), Akira Mino (Yokkaichi Mie, Japan), Masayoshi Tagami (Kuwana Mie, Japan) and Shinya Arai (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device of an embodiment includes a substrate, a plurality of first conductive layers, pillar, and a second conductive layer. The plurality of first conductive layers are provided above the substrate, and mutually separated in a first direction. The pillar is provided to penetrate the pl...