ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,470, issued on Jan. 20, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Natsuki Fukuda (Yokkaichi Mie, Japan) and Tadashi Iguchi (Yokkaichi Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate including a first region and a second region, a plurality of first conductive layers, a first semiconductor layer disposed in the first region, an electric charge accumulating layer, a contact electrode disposed in the second region and connected to one of the plurality of first conductive layers, and a plurality of first structures and a plurality of second structures ...