US Patent Issued to Kioxia on Jan. 13 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,286, issued on Jan. 13, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Tomoki Nakagawa (Yokohama Kanagawa, Japan), Koji Kato (Yokohama Kanagawa, Japan) and Toshifumi Hashimoto (Fujisawa Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a plurality of memory cells, a word line connected to gates of the memory cells, a bit line electrically connected to one ends of the memory cells through a plurality of select gate transistors, respectively, the select gate transistors including two outer select gate transistors and one or more inner select gate transistors betwe...