US Patent Issued to KIOXIA on Jan. 13 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,532, issued on Jan. 13, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Eiichi Shin (Yokkaichi Mie, Japan), Satoshi Hongo (Yokkaichi Mie, Japan), Susumu Yamamoto (Yokkaichi Mie, Japan), Yukio Katamura (Mie Mie, Japan), Gen Toyota (Yokkaichi Mie, Japan) and Tsutomu Fujita (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a wiring layer; a first stacked body disposed on the wiring layer; a second stacked body disposed on the first stacked body in a stacking direction; and a first resin body disposed around a periphery of th...