US Patent Issued to Kioxia on Feb. 3 for "Semiconductor storage device and method of manufacturing semiconductor storage device" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,309, issued on Feb. 3, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device and method of manufacturing semiconductor storage device" was invented by Tomohiro Kuki (Yokkaichi, Japan), Tatsufumi Hamada (Nagoya, Japan), Shinichi Sotome (Yokohama, Japan) and Yosuke Mitsuno (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device according to an embodiment includes a stacked body and a pillar. The pillar includes an insulating core, a channel layer, and a memory film. A plurality of gate electrode layers included in the stacked body includes a plurality of first gate electrode layers and one or more s...