US Patent Issued to Kioxia on Feb. 18 for "Semiconductor memory device with conductive layers separated between memory blocks" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,326, issued on Feb. 18, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device with conductive layers separated between memory blocks" was invented by Keisuke Suda (Yokkaichi Mie, Japan), Ryota Suzuki (Yokkaichi Mie, Japan) and Kenta Yamada (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes memory blocks arranged in a first direction and bit lines that are arranged in a second direction, and are arranged with the memory blocks in a third direction. The memory block includes first conductive layers arranged in the third direction, a second conductive layer disposed on a side opposit...