ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,319, issued on Feb. 18, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Takahito Nishimura (Kuwana, Japan) and Takuya Nishikawa (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor memory device includes: a stacked body that includes a plurality of conductive layers and a plurality of first insulating layers alternately stacked one by one and a stepped portion in which the plurality of conductive layers is processed in a stepped shape; and a plurality of second pillars that extends in the stacked body in the stepped portion, in which each of the plurality of...