US Patent Issued to Kioxia on Feb. 18 for "Memory device including memory cell including variable resistance element and switching element" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,322, issued on Feb. 18, was assigned to Kioxia Corp. (Tokyo).

"Memory device including memory cell including variable resistance element and switching element" was invented by Ryousuke Takizawa (Naka Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A first switching element in a memory cell is configured to transition from an ON state to an OFF state in response to a voltage applied between its two terminals being decreased. A read circuit is configured to place the second interconnect in a floating state, and, after placing the second interconnect in the floating state and based on a comparison between a first voltage of the second in...