US Patent Issued to Kioxia on Feb. 10 for "Semiconductor memory device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,339, issued on Feb. 10, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device and method of manufacturing the same" was invented by Yasuhito Nakajima (Yokkaichi Mie, Japan) and Kosei Noda (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a plurality of first conductive layers arranged in a first direction intersecting with a surface of the substrate, a memory structure including a first semiconductor layer opposed to the first conductive layers, a first wiring, a second conductive layer, a first insulating layer separating the plurality of first conductive layers in ...