ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,314, issued on Feb. 10, was assigned to KIOXIA Corp. (Tokyo).
"Semiconductor device" was invented by Taro Shiokawa (Nagoya Aichi, Japan), Takeru Maeda (Yokkaichi Mie, Japan), Kotaro Noda (Yokkaichi Mie, Japan) and Shosuke Fujii (Kuwana Mie, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a first layer formed on the semiconductor substrate and including a semiconductor element and a first insulating film, a second layer formed above the first layer and including a channel including an oxide semiconductor and a second insulating film, and a third layer formed above the second layer, and i...