US Patent Issued to Kioxia on Feb. 10 for "Method of manufacturing a three-dimensional stacked semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,700, issued on Feb. 10, was assigned to Kioxia Corp. (Tokyo).

"Method of manufacturing a three-dimensional stacked semiconductor memory device" was invented by Ayumu Ozawa (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor memory device of one embodiment includes a first resist forming process, a first step forming process, a second resist forming process, and a second step forming process. In the first resist forming process, a first resist layer is formed on the upper surface of the stacked body. In the first step forming process, a lower region of a first stepped portion and an upper region of ...