ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,550, issued on Dec. 9, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor storage device" was invented by Yoshikazu Hosomura (Kamakura Kanagawa, Japan), Hideyuki Kataoka (Yokohama Kanagawa, Japan), Yoshinao Suzuki (Yokohama Kanagawa, Japan), Mai Shimizu (Kamakura Kanagawa, Japan), Kazuyoshi Muraoka (Yokohama Kanagawa, Japan) and Masami Masuda (Chigasaki Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes a memory cell array having a plurality of first conductive layers stacked in a first direction and a plurality of memory cells connected to the plurality of first conductive layers, a wiring layer,...