US Patent Issued to KIOXIA on Dec. 9 for "Semiconductor memory device and manufacturing method thereof" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,549, issued on Dec. 9, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor memory device and manufacturing method thereof" was invented by Yusuke Shima (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first region where a plurality of conductive layers, a plurality of insulating layers, a semiconductor layer, and a gate insulating layer are formed and a second region different from the first region above a substrate. The plurality of conductive layers include a plurality of first conductive layers and a plurality of second conductive layers. The semiconductor memory device includes a plurality...