US Patent Issued to KIOXIA on Dec. 9 for "Semiconductor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,381, issued on Dec. 9, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor device and method of manufacturing the same" was invented by Satoshi Tsukiyama (Yokohama Kanagawa, Japan), Satoru Takaku (Yokohama Kanagawa, Japan), Yuki Sugo (Suzuka Mie, Japan) and Ayana Amano (Nagoya Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first adhesive layer, a first semiconductor chip, and a second adhesive layer. The first adhesive layer is provided above a first surface of the substrate and includes a plurality of types of resins having different molecular weights and a filler. The first semiconductor ...