ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,551, issued on Dec. 9, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device" was invented by Muneyuki Tsuda (Ichinomiya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a plurality of conductive layers stacked apart from each other and extending in a plate shape in a direction crossing a stacking direction; a channel body including a semiconductor film and penetrating the plurality of conductive layers; a memory film including a charge accumulation film and provided between the plurality of conductive layers and the channel body; and a high dielectric constant (high-k) film arrang...