US Patent Issued to KIOXIA on Dec. 30 for "Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,335, issued on Dec. 30, was assigned to KIOXIA Corp. (Tokyo).

"Substrate processing apparatus, substrate processing method, and method of manufacturing semiconductor device" was invented by Fuyuma Ito (Mie, Japan), Jun Takagi (Mie, Japan), Ai Mori (Mie, Japan), Yosuke Maruyama (Mie, Japan), Yuya Akeboshi (Mie, Japan), Takashi Watanabe (Mie, Japan) and Hiroyasu Iimori (Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing apparatus includes: a plurality of roller pairs configured to place a plurality of substrates, respectively, wherein the substrates are arranged side by side in a horizontal direction with a predetermine...