US Patent Issued to KIOXIA on Dec. 30 for "Nonvolatile semiconductor memory and manufacturing method therefor" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,140, issued on Dec. 30, was assigned to KIOXIA Corp. (Tokyo).

"Nonvolatile semiconductor memory and manufacturing method therefor" was invented by Kunifumi Suzuki (Yokkaichi Mie, Japan) and Yuuichi Kamimuta (Nagoya Aichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes: a core structure extending in a first direction orthogonal to a semiconductor substrate; a semiconductor layer extending in the first direction and in contact with the core structure; an insulating layer extending in the first direction and in contact with the semiconductor layer; a ferroelectric layer extending in the first direction and in contact with t...