ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,415, issued on Dec. 23, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor memory device" was invented by Keisuke Nakatsuka (Kobe Hyogo, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device according to an embodiment includes first to ninth conductive layers, first and second insulating members, and first to fourth pillars. A distance between the first and second pillars in a cross section including the second conductive layer and the sixth conductive layer is smaller than a distance between the first and second pillars in a cross section including the third conductive layer and the seventh conductive layer. A distanc...