ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,398, issued on Dec. 23, was assigned to Kioxia Corp. (Tokyo).
"Semiconductor device and semiconductor memory device" was invented by Kasumi Yasuda (Kanagawa, Japan) and Hiroki Kawai (Aichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a metal oxide semiconductor contacting the first electrode and the second electrode, a gate electrode, and an insulating film disposed between the metal oxide semiconductor and the gate electrode. The metal oxide semiconductor comprises indium, zinc, and niobium."
The patent was filed on March 1, 2023, under App...