US Patent Issued to KIOXIA on Dec. 2 for "Semiconductor storage device and manufacturing method thereof" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,435, issued on Dec. 2, was assigned to KIOXIA Corp. (Tokyo).

"Semiconductor storage device and manufacturing method thereof" was invented by Hideto Takekida (Nagoya Aichi, Japan), Keisuke Suda (Yokkaichi Mie, Japan), Naoyuki Iida (Yokkaichi Mie, Japan), Kohei Nyui (Yokkaichi Mie, Japan) and Ryo Hikida (Yokkaichi Mie, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connect...